CVE-2018-11982
highpriority · track · 35EPSS 0.004 · 33 %ileEUUSEPSS · scored 2026-10-27
In Snapdragon (Mobile, Wear) in version MDM9206, MDM9607, MDM9635M, MDM9640, MDM9645, MDM9655, MSM8909W, MSM8996AU, SD 210/SD 212/SD 205, SD 410/12, SD 425, SD 427, SD 430, SD 435, SD 450, SD 615/16/SD 415, SD 617, SD 625, SD 650/52, SD 810, SD 820, SD 835, Snapdragon_High_Med_2016, a double free of ASN1 heap memory used for EUTRA CAP container occurs during UTRAN to LTE Capability inquiry procedure.
cvss
Technical severity, 0–10. One row per scoring source.
base score 0–10 · higher = more severe · hover a vector to decode
weaknesses
The CWE weakness classes this flaw belongs to.
affected products (29)
Products and version ranges known to be affected.
- Qualcomm, Inc. Snapdragon Mobile, Snapdragon Wear≤ MDM9206, MDM9607, MDM9635M, MDM9640, MDM9645, MDM9655, MSM8909W, MSM8996AU, SD 210/SD 212/SD 205, SD 410/12, SD 425, SD 427, SD 430, SD 435, SD 450, SD 615/16/SD 415, SD 617, SD 625, SD 650/52, SD 810, SD 820, SD 835, Snapdragon_High_Med_2016enisa_euvdEU
also known as (3)
Other names and identifiers for this entity.
sources
Which sources assert this record, and when.
references (3)
External citations — patches, advisories, analysis.
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